Infineon HEXFET Silicon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

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Subtotal (1 pack of 5 units)*

£10.75

(exc. VAT)

£12.90

(inc. VAT)

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  • 715 unit(s) ready to ship
  • Plus 999,999,280 unit(s) shipping from 08 January 2026
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Per Pack*
5 - 45£2.15£10.75
50 - 120£1.936£9.68
125 - 245£1.828£9.14
250 - 495£1.698£8.49
500 +£1.57£7.85

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Packaging Options:
RS Stock No.:
262-6746
Mfr. Part No.:
IRFB260NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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