Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF

Save 35% when you buy 1250 units

Subtotal (1 tube of 50 units)*

£27.80

(exc. VAT)

£33.35

(inc. VAT)

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In Stock
  • 400 unit(s) ready to ship
  • Plus 100 unit(s) ready to ship from another location
  • Plus 10,350 unit(s) shipping from 08 October 2025
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Units
Per unit
Per Tube*
50 - 50£0.556£27.80
100 - 200£0.439£21.95
250 - 450£0.412£20.60
500 - 1200£0.384£19.20
1250 +£0.356£17.80

*price indicative

RS Stock No.:
919-4817
Mfr. Part No.:
IRF640NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

67 nC @ 10 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

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