Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£27.80

(exc. VAT)

£33.35

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 250 unit(s) shipping from 22 October 2025
Plus 100 unit(s) shipping from 22 October 2025
Plus 9,300 unit(s) shipping from 29 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.556	£27.80
100 - 200	£0.439	£21.95
250 - 450	£0.412	£20.60
500 - 1200	£0.384	£19.20
1250 +	£0.356	£17.80

*price indicative

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	18 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	150 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	67 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 18 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 150 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 67 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 8.77mm

COO (Country of Origin):: MX

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF

This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.

Features & Benefits

• Continuous drain current up to 18A for robust power handling
• Operates effectively at voltage levels up to 200V for increased versatility
• Low on-resistance minimises energy loss during operation
• Simplified drive requirements facilitate integration into circuits
• Fully avalanche rated for enhanced safety and performance

Applications

• Utilised in power supply circuits for industrial automation
• Suitable for motor control in robotics
• Ideal for renewable energy systems such as solar inverters
• Employed in power switching systems for electrical equipment
• Utilised in amplification stages for audio equipment

How does temperature affect the performance?

The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.

What is the significance of the maximum gate-source voltage?

The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.

Can this component handle sudden voltage spikes?

Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.

What is the impact of on-resistance on overall efficiency?

Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.