Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF

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£27.80

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£33.35

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50 - 50£0.556£27.80
100 - 200£0.439£21.95
250 - 450£0.412£20.60
500 - 1200£0.384£19.20
1250 +£0.356£17.80

*price indicative

RS Stock No.:
919-4817
Mfr. Part No.:
IRF640NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

67 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

8.77mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF


This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.

Features & Benefits


• Continuous drain current up to 18A for robust power handling
• Operates effectively at voltage levels up to 200V for increased versatility
• Low on-resistance minimises energy loss during operation
• Simplified drive requirements facilitate integration into circuits
• Fully avalanche rated for enhanced safety and performance

Applications


• Utilised in power supply circuits for industrial automation
• Suitable for motor control in robotics
• Ideal for renewable energy systems such as solar inverters
• Employed in power switching systems for electrical equipment
• Utilised in amplification stages for audio equipment

How does temperature affect the performance?


The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.

What is the significance of the maximum gate-source voltage?


The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.

Can this component handle sudden voltage spikes?


Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.

What is the impact of on-resistance on overall efficiency?


Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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