Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRFS4020TRLPBF
- RS Stock No.:
- 130-1000
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£7.40
(exc. VAT)
£8.90
(inc. VAT)
FREE delivery for orders over £50.00
- 300 unit(s) ready to ship
- Plus 999,999,695 unit(s) shipping from 03 December 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.48 | £7.40 |
50 - 120 | £1.414 | £7.07 |
125 - 245 | £1.38 | £6.90 |
250 - 495 | £1.344 | £6.72 |
500 + | £1.308 | £6.54 |
*price indicative
- RS Stock No.:
- 130-1000
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 200 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 105 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.9V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 100 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Height | 9.65mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 105 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 9.65mm | ||
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