Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRFS4020TRLPBF
- RS Stock No.:
- 130-1000
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£7.40
(exc. VAT)
£8.90
(inc. VAT)
FREE delivery for orders over £50.00
- 75 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.48 | £7.40 |
50 - 120 | £1.414 | £7.07 |
125 - 245 | £1.38 | £6.90 |
250 - 495 | £1.344 | £6.72 |
500 + | £1.308 | £6.54 |
*price indicative
- RS Stock No.:
- 130-1000
- Mfr. Part No.:
- IRFS4020TRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 200 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 105 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.9V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 100 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Height | 9.65mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 200 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 105 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.65mm | ||
Digital Audio MOSFET, Infineon
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF
Features & Benefits
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes
Applications
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems
What is the maximum continuous drain current?
Can this device operate at high temperatures?
What configurations can it be used in?
How does low gate charge impact performance?
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