MPN

Infineon HEXFET N-Channel MOSFET, 18 A, 55 V, 3-Pin TO-220AB IRLZ24NPBF

RS Stock No.:: 541-1231
Mfr. Part No.:: IRLZ24NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 55 V, 3-Pin TO-220AB IRLZ24NPBF

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Subtotal (1 unit)*

£0.69

(exc. VAT)

£0.83

(inc. VAT)

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Temporarily out of stock

4 unit(s) shipping from 11 September 2025

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Units	Per unit
1 - 24	£0.69
25 - 49	£0.61
50 - 99	£0.57
100 - 249	£0.52
250 +	£0.49

*price indicative

RS Stock No.:: 541-1231
Mfr. Part No.:: IRLZ24NPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF

This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.

Features & Benefits

• Supports a maximum continuous drain current of 18A for high performance
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions

Applications

• Utilised for power management in industrial automation systems
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance

What are the recommended gate-source voltages for proper operation?

The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.

Can this component be used in high-temperature environments?

Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.

How does the low Rds(on) impact energy consumption?

A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.

What considerations should be made during installation?

Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	18 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10.54mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	15 nC @ 5 V
	Width	4.69mm
	Forward Diode Voltage	1.3V
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 18 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10.54mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 15 nC @ 5 V
	Width 4.69mm
	Forward Diode Voltage 1.3V
	Height 8.77mm
	Minimum Operating Temperature -55 °C

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