N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905TRLPBF
- RS Stock No.:
- 215-2606
- Mfr. Part No.:
- IRLR2905TRLPBF
- Brand:
- Infineon
220 In stock - FREE next working day delivery available
Price Each (On a Reel of 3000)
£0.556
(exc. VAT)
£0.667
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.556 | £1,668.00 |
*price indicative
- RS Stock No.:
- 215-2606
- Mfr. Part No.:
- IRLR2905TRLPBF
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 42 A |
| Maximum Drain Source Voltage | 55 V |
| Series | HEXFET |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.027 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
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