Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF
- RS Stock No.:
- 220-7489
- Mfr. Part No.:
- IRFR1010ZTRPBF
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£918.00
(exc. VAT)
£1,102.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £0.459 | £918.00 |
*price indicative
- RS Stock No.:
- 220-7489
- Mfr. Part No.:
- IRFR1010ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0075 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 20V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0075 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 20V | ||
Number of Elements per Chip 2 | ||
The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
Capable of being wave-soldered
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
Capable of being wave-soldered
Related links
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK IRFR1010ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK AUIRFR48ZTRL
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 150 V, 3-Pin DPAK IRFR24N15DTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 30 V, 3-Pin DPAK IRFR3709ZTRLPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin DPAK IRFR3504ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 100 V, 3-Pin TO-247AC AUIRFP4110
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 100 V, 8-Pin SO-8 IRF7490TRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin D2PAK AUIRF1404STRL