Infineon HEXFET N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

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Subtotal (1 pack of 10 units)*

£11.10

(exc. VAT)

£13.30

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40£1.11£11.10
50 - 90£1.055£10.55
100 - 240£1.01£10.10
250 - 490£0.966£9.66
500 +£0.899£8.99

*price indicative

Packaging Options:
RS Stock No.:
214-9129
Mfr. Part No.:
IRFR4104TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0055 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

It comes with Advanced Process Technology
The MOSFET is Lead-Free

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