Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

RS Stock No.:: 919-4873
Mfr. Part No.:: IRFP150NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

£34.30

(exc. VAT)

£41.15

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

600 unit(s) ready to ship

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Units	Per unit	Per Tube*
25 - 25	£1.372	£34.30
50 - 100	£1.303	£32.58
125 - 225	£1.248	£31.20
250 - 600	£1.193	£29.83
625 +	£1.111	£27.78

*price indicative

RS Stock No.:: 919-4873
Mfr. Part No.:: IRFP150NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	160W
	Typical Gate Charge Qg @ Vgs	110nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	20.3mm
	Length	15.9mm
	Width	5.3 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 160W
	Typical Gate Charge Qg @ Vgs 110nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 20.3mm
	Length 15.9mm
	Width 5.3 mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF

This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits

• Maximum continuous drain current of 42A

• Maximum drain-source voltage of 100V

• Low Rds(on) of 36mΩ for enhanced efficiency

• Maximum power dissipation of 160W

• Utilises enhancement mode for improved operation

• Integrated in a TO-247AC package for straightforward mounting

Applications

• Utilised in power supply circuits for automation devices

• Suitable for motor control in industrial machinery

• Employed in renewable energy systems for effective power conversion

• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?

The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?

A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?

Yes, the TO-247AC package is specifically intended for through-hole mounting applications.

What considerations should be taken during installation?

Ensure the device is adequately cooled during operation to maintain optimal performance and prevent overheating.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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