Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

£24.875

(exc. VAT)

£29.85

(inc. VAT)

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  • 175 unit(s) ready to ship
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Units
Per unit
Per Tube*
25 - 25£0.995£24.88
50 - 100£0.946£23.65
125 - 225£0.906£22.65
250 - 600£0.866£21.65
625 +£0.806£20.15

*price indicative

RS Stock No.:
919-4873
Mfr. Part No.:
IRFP150NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

160W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

20.3mm

Standards/Approvals

No

Length

15.9mm

Automotive Standard

No

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF


This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits


• Maximum continuous drain current of 42A

• Maximum drain-source voltage of 100V

• Low Rds(on) of 36mΩ for enhanced efficiency

• Maximum power dissipation of 160W

• Utilises enhancement mode for improved operation

• Integrated in a TO-247AC package for straightforward mounting

Applications


• Utilised in power supply circuits for automation devices

• Suitable for motor control in industrial machinery

• Employed in renewable energy systems for effective power conversion

• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?


Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?


The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?


A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?


Yes, the TO-247AC package is specifically intended for through-hole mounting applications.

What considerations should be taken during installation?


Ensure the device is adequately cooled during operation to maintain optimal performance and prevent overheating.

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