Infineon HEXFET N-Channel MOSFET, 42 A, 100 V, 3-Pin TO-247AC IRFP150NPBF

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Subtotal (1 tube of 25 units)*

£34.30

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£41.15

(inc. VAT)

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25 - 25£1.372£34.30
50 - 100£1.303£32.58
125 - 225£1.248£31.20
250 - 600£1.193£29.83
625 +£1.111£27.78

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RS Stock No.:
919-4873
Mfr. Part No.:
IRFP150NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

110 nC @ 10 V

Length

15.9mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

20.3mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF


This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits


• Maximum continuous drain current of 42A
• Maximum drain-source voltage of 100V
• Low Rds(on) of 36mΩ for enhanced efficiency
• Maximum power dissipation of 160W
• Utilises enhancement mode for improved operation
• Integrated in a TO-247AC package for straightforward mounting

Applications


• Utilised in power supply circuits for automation devices
• Suitable for motor control in industrial machinery
• Employed in renewable energy systems for effective power conversion
• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?


Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?


The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?


A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?


Yes, the TO-247AC package is specifically intended for through-hole mounting applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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