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Infineon HEXFET N-Channel MOSFET, 42 A, 100 V, 3-Pin TO-247AC IRFP150NPBF

RS Stock No.:: 541-0856
Distrelec Article No.:: 303-41-346
Mfr. Part No.:: IRFP150NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 42 A, 100 V, 3-Pin TO-247AC IRFP150NPBF

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£1.69

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£2.03

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In Stock

260 unit(s) ready to ship
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Plus 740 unit(s) shipping from 11 September 2025

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Units	Per unit
1 - 9	£1.69
10 - 49	£1.60
50 - 99	£1.57
100 - 249	£1.47
250 +	£1.37

*price indicative

RS Stock No.:: 541-0856
Distrelec Article No.:: 303-41-346
Mfr. Part No.:: IRFP150NPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF

This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits

• Maximum continuous drain current of 42A
• Maximum drain-source voltage of 100V
• Low Rds(on) of 36mΩ for enhanced efficiency
• Maximum power dissipation of 160W
• Utilises enhancement mode for improved operation
• Integrated in a TO-247AC package for straightforward mounting

Applications

• Utilised in power supply circuits for automation devices
• Suitable for motor control in industrial machinery
• Employed in renewable energy systems for effective power conversion
• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?

The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?

A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?

Yes, the TO-247AC package is specifically intended for through-hole mounting applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	42 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	36 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	160 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	15.9mm
	Typical Gate Charge @ Vgs	110 nC @ 10 V
	Transistor Material	Si
	Width	5.3mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	20.3mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 42 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 36 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 160 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 15.9mm
	Typical Gate Charge @ Vgs 110 nC @ 10 V
	Transistor Material Si
	Width 5.3mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 20.3mm

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