Name: Infineon HEXFET N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK IRF1310NSTRLPBF
Brand: Infineon
SKU: 215-2572
Price: 0.88 GBP
Availability: InStock

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Advanced Process Technology
Fully avalanche rated
Fast switching

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	42 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	0.036 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Transistor Material	Si
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 42 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 0.036 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Transistor Material Si
	Number of Elements per Chip 1

Infineon HEXFET N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK IRF1310NSTRLPBF

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