Infineon IRF3710ZS N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK IRF3710ZSTRLPBF

Subtotal (1 reel of 800 units)*

£492.00

(exc. VAT)

£590.40

(inc. VAT)

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Units
Per unit
Per Reel*
800 +£0.615£492.00

*price indicative

RS Stock No.:
162-3273
Mfr. Part No.:
IRF3710ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Series

IRF3710ZS

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.65mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Forward Diode Voltage

1.3V

Height

4.83mm

Minimum Operating Temperature

-55 °C

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

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