Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1
- RS Stock No.:
- 258-3833
- Mfr. Part No.:
- IPD122N10N3GATMA1
- Brand:
- Infineon
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£1.94
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£2.32
(inc. VAT)
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In Stock
- Plus 1,262 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £0.97 | £1.94 |
| 20 - 48 | £0.87 | £1.74 |
| 50 - 98 | £0.81 | £1.62 |
| 100 - 198 | £0.755 | £1.51 |
| 200 + | £0.70 | £1.40 |
*price indicative
- RS Stock No.:
- 258-3833
- Mfr. Part No.:
- IPD122N10N3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.2mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.2mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.
Excellent switching performance
Less paralleling required
Smallest board-space consumption
Easy-to-design products
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