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Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1

RS Stock No.:: 244-0878
Mfr. Part No.:: IPD50N10S3L16ATMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£1.33

(exc. VAT)

£1.596

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

1,500 unit(s) shipping from 08 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	£0.665	£1.33
10 - 18	£0.65	£1.30
20 - 48	£0.63	£1.26
50 - 98	£0.615	£1.23
100 +	£0.60	£1.20

*price indicative

RS Stock No.:: 244-0878
Mfr. Part No.:: IPD50N10S3L16ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101