Infineon N-Channel MOSFET, 6 A, 650 V, 3-Pin DPAK IPD65R660CFDAATMA1

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£1.98

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£2.38

(inc. VAT)

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Packaging Options:
RS Stock No.:
244-8548
Mfr. Part No.:
IPD65R660CFDAATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

650 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Number of Elements per Chip

1

The Infineon CoolMOS MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler.

Ultra-fast body diode
Very high commutation ruggedness
Extremely low losses due to very low
Easy to use/drive
Qualified according to AEC Q101
Green package (RoHS compliant)

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