Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1
- RS Stock No.:
- 244-8544
- Mfr. Part No.:
- IPD050N10N5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.66
(exc. VAT)
£4.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,566 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.83 | £3.66 |
| 20 - 48 | £1.535 | £3.07 |
| 50 - 98 | £1.425 | £2.85 |
| 100 - 198 | £1.335 | £2.67 |
| 200 + | £1.225 | £2.45 |
*price indicative
- RS Stock No.:
- 244-8544
- Mfr. Part No.:
- IPD050N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM5 Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.
N-channel, normal level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Ideal for high-frequency switching
Related links
- Infineon N-Channel MOSFET 100 V, 3-Pin DPAK IPD050N10N5ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin DPAK IPD082N10N3GATMA1
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin DPAK STD100N10F7
- ROHM AG194FPD3HRB N-Channel MOSFET 100 V, 3-Pin DPAK AG194FPD3HRBTL
- ROHM RD3P08BBLHRB P-Channel MOSFET 100 V, 3-Pin DPAK RD3P08BBLHRBTL
- Infineon N-Channel MOSFET 80 V, 3-Pin DPAK IPD046N08N5ATMA1
- Infineon N-Channel MOSFET 100 V, 3-Pin DPAK IPD50N10S3L16ATMA1
- Infineon N-Channel MOSFET 100 V, 3-Pin DPAK IPD90N10S406ATMA1


