MPN

Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1

RS Stock No.:: 244-0883
Mfr. Part No.:: IPD95R750P7ATMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1

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Subtotal (1 pack of 2 units)*

£3.32

(exc. VAT)

£3.98

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,358 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£1.66	£3.32
20 - 48	£1.36	£2.72
50 - 98	£1.28	£2.56
100 - 198	£1.19	£2.38
200 +	£1.09	£2.18

*price indicative

RS Stock No.:: 244-0883
Mfr. Part No.:: IPD95R750P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD95R750P7ATMA1

The Infineon MOSFET 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) * Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection