MPN

Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263 IRF3710ZSTRLPBF

RS Stock No.:: 162-3302
Mfr. Part No.:: IRF3710ZSTRLPBF
Brand:: Infineon

Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263 IRF3710ZSTRLPBF

Subtotal (1 pack of 10 units)*

£11.74

(exc. VAT)

£14.09

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

440 unit(s) ready to ship
Plus 40 unit(s) ready to ship from another location
Plus 130 unit(s) shipping from 02 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	£1.174	£11.74

*price indicative

RS Stock No.:: 162-3302
Mfr. Part No.:: IRF3710ZSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	100V
	Series	IRF3710ZS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	160W
	Typical Gate Charge Qg @ Vgs	82nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Width	9.65 mm
	Height	4.83mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 100V
	Series IRF3710ZS
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 160W
	Typical Gate Charge Qg @ Vgs 82nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Width 9.65 mm
	Height 4.83mm
	Automotive Standard AEC-Q101

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free