Infineon IRF3710ZS N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK IRF3710ZSTRLPBF
- RS Stock No.:
- 162-3302
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£11.74
(exc. VAT)
£14.09
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 40 unit(s) ready to ship from another location
- Plus 130 unit(s) shipping from 14 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £1.174 | £11.74 |
*price indicative
- RS Stock No.:
- 162-3302
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 59 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Series | IRF3710ZS | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 82 nC @ 10 V | |
| Forward Diode Voltage | 1.3V | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 59 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series IRF3710ZS | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 82 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
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