Infineon HEXFET N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

RS Stock No.:: 919-4814
Mfr. Part No.:: IRLZ44NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

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Subtotal (1 tube of 50 units)*

£37.55

(exc. VAT)

£45.05

(inc. VAT)

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Temporarily out of stock

2,600 unit(s) shipping from 29 October 2025

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Units	Per unit	Per Tube*
50 - 50	£0.751	£37.55
100 - 200	£0.556	£27.80
250 - 450	£0.518	£25.90
500 - 950	£0.481	£24.05
1000 +	£0.443	£22.15

*price indicative

RS Stock No.:: 919-4814
Mfr. Part No.:: IRLZ44NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	47 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	22 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	48 nC @ 5 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 47 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 22 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 48 nC @ 5 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Height 8.77mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF

This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.

Features & Benefits

• Supports continuous drain current up to 47A for effective power delivery
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency

Applications

• Power supply circuits requiring efficient load switching
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation

What is the operating temperature range of the device?

The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.

How should this be mounted for optimal performance?

It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.

Can it be used with other power management components?

Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.

What are the implications of the gate threshold voltage range?

A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.