Infineon HEXFET Type N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4814
Mfr. Part No.:: IRLZ44NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£37.55

(exc. VAT)

£45.05

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

4,000 unit(s) shipping from 17 June 2026
Plus 2,000 unit(s) shipping from 22 July 2026

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Units	Per unit	Per Tube*
50 - 50	£0.751	£37.55
100 - 200	£0.556	£27.80
250 - 450	£0.518	£25.90
500 - 950	£0.481	£24.05
1000 +	£0.443	£22.15

*price indicative

RS Stock No.:: 919-4814
Mfr. Part No.:: IRLZ44NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	48nC
	Maximum Power Dissipation Pd	110W
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Standards/Approvals	No
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 48nC
	Maximum Power Dissipation Pd 110W
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Standards/Approvals No
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF

This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.

Features & Benefits

• Supports continuous drain current up to 47A for effective power delivery

• Operates at a drain-source voltage of 55V, enhancing application versatility

• Maximum power dissipation of 110W optimises thermal management

• Enhancement mode design ensures effective switching and control

• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage

• High current handling with a low on-resistance of 22mΩ improves efficiency

Applications

• Power supply circuits requiring efficient load switching

• DC-DC converters in renewable energy systems

• Automotive demanding high performance

• Motor control systems for enhanced operational efficiency

• Lighting systems requiring precise power regulation

What is the operating temperature range of the device?

The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.

How should this be mounted for optimal performance?

It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.

Can it be used with other power management components?

Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.

What are the implications of the gate threshold voltage range?

A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.

Is it suitable for high-frequency applications?

With a low gate charge of 48nC at 5V, it supports high-frequency switching applications, contributing to overall efficiency in power systems.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today