Infineon HEXFET N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF
- RS Stock No.:
- 919-4814
- Mfr. Part No.:
- IRLZ44NPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£37.55
(exc. VAT)
£45.05
(inc. VAT)
FREE delivery for orders over £50.00
- 2,600 unit(s) shipping from 29 October 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.751 | £37.55 |
100 - 200 | £0.556 | £27.80 |
250 - 450 | £0.518 | £25.90 |
500 - 950 | £0.481 | £24.05 |
1000 + | £0.443 | £22.15 |
*price indicative
- RS Stock No.:
- 919-4814
- Mfr. Part No.:
- IRLZ44NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 47 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 22 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 48 nC @ 5 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 48 nC @ 5 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF
Features & Benefits
• Operates at a drain-source voltage of 55V, enhancing application versatility
• Maximum power dissipation of 110W optimises thermal management
• Enhancement mode design ensures effective switching and control
• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage
• High current handling with a low on-resistance of 22mΩ improves efficiency
Applications
• DC-DC converters in renewable energy systems
• Automotive demanding high performance
• Motor control systems for enhanced operational efficiency
• Lighting systems requiring precise power regulation
What is the operating temperature range of the device?
How should this be mounted for optimal performance?
Can it be used with other power management components?
What are the implications of the gate threshold voltage range?
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