MPN

Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263

RS Stock No.:: 217-2597
Mfr. Part No.:: IRF3805STRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 800 units)*

£1,408.00

(exc. VAT)

£1,688.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,600 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
800 +	£1.76	£1,408.00

*price indicative

RS Stock No.:: 217-2597
Mfr. Part No.:: IRF3805STRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	190nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Height	2.3mm
	Length	6.5mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 190nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Height 2.3mm
	Length 6.5mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF3805STRLPBF

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

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