MPN

Infineon HEXFET N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB IRFB3077PBF

RS Stock No.:: 650-4716
Distrelec Article No.:: 303-41-316
Mfr. Part No.:: IRFB3077PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB IRFB3077PBF

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£2.56

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£3.07

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190 unit(s) ready to ship
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Units	Per unit
1 - 9	£2.56
10 - 24	£2.43
25 - 49	£2.38
50 - 99	£2.23
100 +	£2.07

*price indicative

RS Stock No.:: 650-4716
Distrelec Article No.:: 303-41-316
Mfr. Part No.:: IRFB3077PBF
Brand:: Infineon

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF

This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.

Features & Benefits

• Achieves low RDS(on) of 3.3mΩ for efficient operation
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability

Applications

• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical

What operating temperature range can this component endure?

It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.

How does the low RDS(on) benefit the application?

The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.

What are the advantages of the TO-220AB package format?

This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.

What type of gate threshold voltage does it require?

The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	210 A
	Maximum Drain Source Voltage	75 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3.3 m?
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	370 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	160 nC @ 10 V
	Width	4.82mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.66mm
	Number of Elements per Chip	1
	Height	9.02mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 210 A
	Maximum Drain Source Voltage 75 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3.3 m?
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 370 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 160 nC @ 10 V
	Width 4.82mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.66mm
	Number of Elements per Chip 1
	Height 9.02mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

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