Infineon HEXFET Silicon N-Channel MOSFET, 210 A, 40 V, 3-Pin TO-220AB IRF2204PBF
- RS Stock No.:
- 262-6721
- Mfr. Part No.:
- IRF2204PBF
- Brand:
- Infineon
Subtotal (1 tube of 1000 units)*
£645.00
(exc. VAT)
£774.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,000 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 1000 + | £0.645 | £645.00 |
*price indicative
- RS Stock No.:
- 262-6721
- Mfr. Part No.:
- IRF2204PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 210 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax
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