Infineon HEXFET Silicon N-Channel MOSFET, 210 A, 40 V, 3-Pin TO-220AB IRF2204PBF

Subtotal (1 tube of 1000 units)*

£645.00

(exc. VAT)

£774.00

(inc. VAT)

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1000 +£0.645£645.00

*price indicative

RS Stock No.:
262-6721
Mfr. Part No.:
IRF2204PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax

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