Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220 IRFB3206PBF
- RS Stock No.:
- 495-574
- Distrelec Article No.:
- 302-84-033
- Mfr. Part No.:
- IRFB3206PBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
£1.10
(exc. VAT)
£1.32
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 125 unit(s) shipping from 01 June 2026
- Plus 69 unit(s) shipping from 01 June 2026
- Plus 72 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £1.10 |
| 10 - 49 | £1.02 |
| 50 - 99 | £0.96 |
| 100 - 249 | £0.90 |
| 250 + | £0.84 |
*price indicative
- RS Stock No.:
- 495-574
- Distrelec Article No.:
- 302-84-033
- Mfr. Part No.:
- IRFB3206PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRFB3077PBF
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRF2204PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263 IRFS3206TRRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263