Infineon HEXFET N-Channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB IRFB3206PBF

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RS Stock No.:
495-574
Distrelec Article No.:
302-84-033
Mfr. Part No.:
IRFB3206PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Height

9.02mm

Minimum Operating Temperature

-55 °C

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