Infineon HEXFET N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB IRF1010EPBF
- RS Stock No.:
- 541-1714
- Distrelec Article No.:
- 303-41-261
- Mfr. Part No.:
- IRF1010EPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£0.81
(exc. VAT)
£0.97
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 3 unit(s) shipping from 27 October 2025
- Plus 3 unit(s) shipping from 27 October 2025
- Plus 8 unit(s) shipping from 03 November 2025
Units | Per unit |
|---|---|
| 1 - 9 | £0.81 |
| 10 - 49 | £0.73 |
| 50 - 99 | £0.69 |
| 100 - 249 | £0.63 |
| 250 + | £0.41 |
*price indicative
- RS Stock No.:
- 541-1714
- Distrelec Article No.:
- 303-41-261
- Mfr. Part No.:
- IRF1010EPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 84 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Width | 4.69mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 84 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Width 4.69mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 8.77mm | ||
N-Channel Power MOSFET 60V to 80V, Infineon
Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF
Features & Benefits
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection
Applications
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices
What are the thermal resistance values for this product?
Can it operate safely in environments with high temperatures?
What type of current can it handle at high temperatures?
How does the gate charge affect its performance?
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EZPBF
- Infineon HEXFET Silicon N-Channel MOSFET 60 V, 3-Pin D2PAK IRF1010ESTRLPBF
- Infineon N-Channel MOSFET 60 V, 3-Pin TO-220 FP IPA029N06NXKSA1
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRLB3036PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3006PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1018EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3806PBF


