Infineon HEXFET N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB IRF1010EPBF
- RS Stock No.:
- 541-1714
- Distrelec Article No.:
- 303-41-261
- Mfr. Part No.:
- IRF1010EPBF
- Brand:
- Infineon
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£0.81
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£0.97
(inc. VAT)
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Units | Per unit |
---|---|
1 - 9 | £0.81 |
10 - 49 | £0.73 |
50 - 99 | £0.69 |
100 - 249 | £0.63 |
250 + | £0.41 |
*price indicative
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- RS Stock No.:
- 541-1714
- Distrelec Article No.:
- 303-41-261
- Mfr. Part No.:
- IRF1010EPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 84 A | |
Maximum Drain Source Voltage | 60 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 12 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Length | 10.54mm | |
Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
Width | 4.69mm | |
Number of Elements per Chip | 1 | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 84 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Width 4.69mm | ||
Number of Elements per Chip 1 | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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