Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF
- RS Stock No.:
- 222-4733
- Mfr. Part No.:
- IRF1010ESTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.00
(exc. VAT)
£13.20
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 60 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.10 | £11.00 |
| 50 - 90 | £1.045 | £10.45 |
| 100 - 240 | £1.001 | £10.01 |
| 250 - 490 | £0.957 | £9.57 |
| 500 + | £0.891 | £8.91 |
*price indicative
- RS Stock No.:
- 222-4733
- Mfr. Part No.:
- IRF1010ESTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-39-411 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Distrelec Product Id 304-39-411 | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Related links
- Infineon HEXFET Silicon N-Channel MOSFET 60 V, 3-Pin D2PAK IRF1010ESTRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EZPBF
- Infineon OptiMOS FD N-Channel MOSFET 200 V, 3-Pin D2PAK IPB117N20NFDATMA1
- Infineon N-Channel MOSFET 60 V, 3-Pin TO-220 FP IPA029N06NXKSA1
- Infineon HEXFET Silicon N-Channel MOSFET 55 V, 3-Pin D2PAK AUIRF3205ZSTRL
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 7-Pin D2PAK IRFS4115TRL7PP
- Infineon HEXFET Silicon N-Channel MOSFET 55 V, 3-Pin D2PAK IRF3205ZSTRLPBF