Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF

RS Stock No.:: 178-1449
Mfr. Part No.:: IRF1010EPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF

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Subtotal (1 tube of 50 units)*

£35.65

(exc. VAT)

£42.80

(inc. VAT)

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In Stock

1,000 unit(s) ready to ship

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Units	Per unit	Per Tube*
50 - 50	£0.713	£35.65
100 - 200	£0.585	£29.25
250 - 450	£0.549	£27.45
500 - 1200	£0.514	£25.70
1250 +	£0.478	£23.90

*price indicative

RS Stock No.:: 178-1449
Mfr. Part No.:: IRF1010EPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	84A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	200W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	130nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.54mm
	Width	4.69 mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 84A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 200W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 130nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.54mm
	Width 4.69 mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF

This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.

Features & Benefits

• Low RDS(on) contributes to minimal power loss at high currents

• High continuous drain current capability of up to 84A enhances efficiency

• Compact TO-220AB package allows for easy mounting

• Fast switching capabilities improve overall circuit performance

• Fully avalanche rated for added device protection

Applications

• Power supply circuits for efficient voltage regulation

• Motor control systems for precise operation

• Driver circuits in high current

• Signal amplification in electronic devices

What are the thermal resistance values for this product?

The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.

Can it operate safely in environments with high temperatures?

Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.

What type of current can it handle at high temperatures?

At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.

How does the gate charge affect its performance?

With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.

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