Infineon HEXFET N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB IRF1010EPBF

RS Stock No.:: 178-1449
Mfr. Part No.:: IRF1010EPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB IRF1010EPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£35.65

(exc. VAT)

£42.80

(inc. VAT)

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Temporarily out of stock

1,000 unit(s) shipping from 25 December 2025

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Units	Per unit	Per Tube*
50 - 50	£0.713	£35.65
100 - 200	£0.585	£29.25
250 - 450	£0.549	£27.45
500 - 1200	£0.514	£25.70
1250 +	£0.478	£23.90

*price indicative

RS Stock No.:: 178-1449
Mfr. Part No.:: IRF1010EPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	84 A
	Maximum Drain Source Voltage	60 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	12 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	130 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	10.54mm
	Width	4.69mm
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 84 A
	Maximum Drain Source Voltage 60 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 12 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 130 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 10.54mm
	Width 4.69mm
	Minimum Operating Temperature -55 °C
	Height 8.77mm

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF

This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.

Features & Benefits

• Low RDS(on) contributes to minimal power loss at high currents
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection

Applications

• Power supply circuits for efficient voltage regulation
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices

What are the thermal resistance values for this product?

The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.

Can it operate safely in environments with high temperatures?

Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.

What type of current can it handle at high temperatures?

At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.

How does the gate charge affect its performance?

With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.