Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
222-4732
Mfr. Part No.:
IRF1010ESTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

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