Infineon OptiMOS FD N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK IPB117N20NFDATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

200 V

Series

OptiMOS FD

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

65 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+170 °C

Width

9.45mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.57mm

Forward Diode Voltage

1.2V