Infineon OptiMOS FD N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK IPB117N20NFDATMA1
- RS Stock No.:
- 110-7458
- Mfr. Part No.:
- IPB117N20NFDATMA1
- Brand:
- Infineon
Subtotal (1 tape of 2 units)*
£3.92
(exc. VAT)
£4.70
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2 unit(s), ready to ship
Units | Per unit | Per Tape* |
|---|---|---|
| 2 + | £1.96 | £3.92 |
*price indicative
- RS Stock No.:
- 110-7458
- Mfr. Part No.:
- IPB117N20NFDATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 84 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS FD | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.31mm | |
| Width | 9.45mm | |
| Maximum Operating Temperature | +170 °C | |
| Number of Elements per Chip | 1 | |
| Height | 4.57mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 84 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS FD | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.31mm | ||
Width 9.45mm | ||
Maximum Operating Temperature +170 °C | ||
Number of Elements per Chip 1 | ||
Height 4.57mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS FD N-Channel MOSFET 200 V, 3-Pin D2PAK IPB117N20NFDATMA1
- Infineon OptiMOS FD N-Channel MOSFET 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1
- Infineon HEXFET Silicon N-Channel MOSFET 60 V, 3-Pin D2PAK IRF1010ESTRLPBF
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 3-Pin D2PAK IPB320N20N3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor 200 V, 3-Pin D2PAK IPB320N20N3GATMA1
- Infineon OptiMOS™ N-Channel MOSFET 200 V, 3-Pin D2PAK IPB107N20N3GATMA1
- Infineon N-Channel MOSFET 60 V, 3-Pin TO-220 FP IPA029N06NXKSA1
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1010EPBF