N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1

RS Stock No.:: 110-7458
Mfr. Part No.:: IPB117N20NFDATMA1
Brand:: Infineon

N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1

28 In stock - FREE next working day delivery available

Price Each (On a Tape of 2)

£5.08

(exc. VAT)

£6.10

(inc. VAT)

Units	Per unit	Per Tape*
2 - 8	£5.08	£10.16
10 - 38	£4.385	£8.77
40 - 98	£3.905	£7.81
100 - 198	£3.655	£7.31
200 +	£3.48	£6.96
*price indicative

RS Stock No.:: 110-7458
Mfr. Part No.:: IPB117N20NFDATMA1
Brand:: Infineon

IPB117N20NFD OptiMOS FD Power-Transistor 200 V
ESD Control Selection Guide V1

RS Stock No.:: 110-7458
Mfr. Part No.:: IPB117N20NFDATMA1
Brand:: Infineon

IPB117N20NFD OptiMOS FD Power-Transistor 200 V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS FD
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+170 °C
Length	10.31mm
Width	9.45mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Number of Elements per Chip	1
Height	4.57mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS FD
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+170 °C
Length	10.31mm
Width	9.45mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Number of Elements per Chip	1
Height	4.57mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1

Infineon OptiMOS™ FD Power MOSFET

Infineon OptiMOS™ FD Power MOSFET

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