Infineon HEXFET N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB IRFB3077PBF
- RS Stock No.:
- 913-3960
- Mfr. Part No.:
- IRFB3077PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£94.80
(exc. VAT)
£113.75
(inc. VAT)
FREE delivery for orders over £50.00
- 950 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £1.896 | £94.80 |
100 - 200 | £1.839 | £91.95 |
250 + | £1.763 | £88.15 |
*price indicative
- RS Stock No.:
- 913-3960
- Mfr. Part No.:
- IRFB3077PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 210 A | |
Maximum Drain Source Voltage | 75 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 370 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.82mm | |
Length | 10.66mm | |
Minimum Operating Temperature | -55 °C | |
Height | 9.02mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.82mm | ||
Length 10.66mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF
Features & Benefits
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability
Applications
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical
What operating temperature range can this component endure?
How does the low RDS(on) benefit the application?
What are the advantages of the TO-220AB package format?
What type of gate threshold voltage does it require?
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