Infineon HEXFET Silicon N-Channel MOSFET, 210 A, 40 V, 3-Pin TO-220AB IRF2204PBF

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£9.90

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£11.90

(inc. VAT)

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5 - 20£1.98£9.90
25 - 45£1.882£9.41
50 - 120£1.76£8.80
125 - 245£1.644£8.22
250 +£1.504£7.52

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Packaging Options:
RS Stock No.:
262-6722
Mfr. Part No.:
IRF2204PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax

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