Infineon HEXFET N-Channel MOSFET, 85 A, 55 V, 3-Pin D2PAK IRF1010NSTRLPBF
- RS Stock No.:
- 165-8197
- Mfr. Part No.:
- IRF1010NSTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 800 units)*
£507.20
(exc. VAT)
£608.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.634 | £507.20 |
| 1600 + | £0.602 | £481.60 |
*price indicative
- RS Stock No.:
- 165-8197
- Mfr. Part No.:
- IRF1010NSTRLPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 180 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 11.3mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 180 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Width 11.3mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
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