Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220 IRFZ34NPBF

RS Stock No.:: 540-9761
Distrelec Article No.:: 303-41-382
Mfr. Part No.:: IRFZ34NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220 IRFZ34NPBF

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RS Stock No.:: 540-9761
Distrelec Article No.:: 303-41-382
Mfr. Part No.:: IRFZ34NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.6V
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.4 mm
	Length	10.54mm
	Height	8.77mm
	Standards/Approvals	No
	Distrelec Product Id	30341382
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.6V
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.4 mm
	Length 10.54mm
	Height 8.77mm
	Standards/Approvals No
	Distrelec Product Id 30341382
	Automotive Standard No

Infineon HEXFET Series MOSFET, 29A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRFZ34NPBF

This MOSFET is tailored for advanced electronic applications, particularly where high efficiency and dependability are essential. Its N-channel configuration facilitates efficient switching and modulation of electrical currents in power systems. With a maximum drain-source voltage of 55V and a continuous drain current of 29A, this component is crucial for high-performance designs in the automation and electrical sectors.

Features & Benefits

• Ultra-low on-resistance for minimal power loss

• Maximum power dissipation of 68W for robust functionality

• High-temperature tolerance of up to 175°C ensures long-term performance

• Compatible with through-hole mounting for easy integration

• Dynamic dv/dt rating allows for fast switching applications

• Enhancement mode transistor improves device efficiency

Applications

• Utilised in power supply designs for effective energy management

• Employed in motor control for accurate speed regulation

• Suitable for discrete switching in consumer electronics

• Applied in industrial automation to enhance system dependability

• Appropriate for automotive requiring high power handling

What is the maximum continuous drain current at 100°C?

At 100°C, the continuous drain current is rated at 20A, ensuring dependability in high-temperature conditions.

How does the low on-resistance benefit circuit efficiency?

A low RDS(on) decreases power losses during operation, which increases overall circuit efficiency and minimises heat generation.

Can it be used for parallel configurations?

Yes, the design accommodates easy paralleling, enhancing current handling for high-power applications.

What are the implications of the maximum gate-source voltage?

The maximum gate-source voltage of ±20V ensures safe operation and protects against damage during standard switching activities.

What is the impact of temperature on performance?

With an operating temperature range from -55°C to +175°C, it maintains operational integrity in extreme conditions, making it suitable for a variety of applications.