Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220AB IRFZ48NPBF
- RS Stock No.:
- 919-4797
- Mfr. Part No.:
- IRFZ48NPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£37.05
(exc. VAT)
£44.45
(inc. VAT)
FREE delivery for orders over £50.00
- 800 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.741 | £37.05 |
100 - 200 | £0.563 | £28.15 |
250 - 450 | £0.526 | £26.30 |
500 - 1200 | £0.489 | £24.45 |
1250 + | £0.452 | £22.60 |
*price indicative
- RS Stock No.:
- 919-4797
- Mfr. Part No.:
- IRFZ48NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 64 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 14 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.69mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 81 nC @ 10 V | |
Length | 10.54mm | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.69mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 81 nC @ 10 V | ||
Length 10.54mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF
Features & Benefits
• Utilises enhancement mode for improved switching characteristics
• Low RDS(on) of 14mΩ enhances efficiency
• Operates reliably within a temperature range of -55°C to +175°C
• Capable of handling gate-source voltages up to ±20V
• Fully avalanche rated for safety in transient conditions
Applications
• Power management circuits in industrial equipment
• Automotive electrical systems and power converters
• DC-DC converters and power supplies
• Motor control requiring high efficiency
What is the maximum power dissipation capability?
How does the operating temperature range affect performance?
Is this device compatible with standard PCB layouts?
What applications benefit most from this component's fast switching speed?
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