Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220AB IRFZ48NPBF

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£37.05

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£44.45

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100 - 200£0.563£28.15
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RS Stock No.:
919-4797
Mfr. Part No.:
IRFZ48NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

4.69mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

81 nC @ 10 V

Length

10.54mm

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF


This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.

Features & Benefits


• Supports continuous drain currents of up to 64A
• Utilises enhancement mode for improved switching characteristics
• Low RDS(on) of 14mΩ enhances efficiency
• Operates reliably within a temperature range of -55°C to +175°C
• Capable of handling gate-source voltages up to ±20V
• Fully avalanche rated for safety in transient conditions

Applications


• Driving inductive loads in automation systems
• Power management circuits in industrial equipment
• Automotive electrical systems and power converters
• DC-DC converters and power supplies
• Motor control requiring high efficiency

What is the maximum power dissipation capability?


The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.

How does the operating temperature range affect performance?


The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.

Is this device compatible with standard PCB layouts?


Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.

What applications benefit most from this component's fast switching speed?


Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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