Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220AB IRFZ48NPBF

RS Stock No.:: 540-9957
Mfr. Part No.:: IRFZ48NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220AB IRFZ48NPBF

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RS Stock No.:: 540-9957
Mfr. Part No.:: IRFZ48NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	64 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	14 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	130 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Maximum Operating Temperature	+175 °C
	Length	10.54mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	81 nC @ 10 V
	Transistor Material	Si
	Height	8.77mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 64 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 14 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 130 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Maximum Operating Temperature +175 °C
	Length 10.54mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 81 nC @ 10 V
	Transistor Material Si
	Height 8.77mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF

This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.

Features & Benefits

• Supports continuous drain currents of up to 64A
• Utilises enhancement mode for improved switching characteristics
• Low RDS(on) of 14mΩ enhances efficiency
• Operates reliably within a temperature range of -55°C to +175°C
• Capable of handling gate-source voltages up to ±20V
• Fully avalanche rated for safety in transient conditions

Applications

• Driving inductive loads in automation systems
• Power management circuits in industrial equipment
• Automotive electrical systems and power converters
• DC-DC converters and power supplies
• Motor control requiring high efficiency

What is the maximum power dissipation capability?

The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.

How does the operating temperature range affect performance?

The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.

Is this device compatible with standard PCB layouts?

Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.

What applications benefit most from this component's fast switching speed?

Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.