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Infineon HEXFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB IRF2805PBF

RS Stock No.:: 784-0274
Distrelec Article No.:: 303-41-270
Mfr. Part No.:: IRF2805PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB IRF2805PBF

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£1.26

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£1.51

(inc. VAT)

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7 unit(s) ready to ship
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Plus 742 unit(s) shipping from 10 September 2025

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Units	Per unit
1 - 9	£1.26
10 - 24	£1.20
25 - 49	£1.14
50 - 99	£1.07
100 +	£1.01

*price indicative

RS Stock No.:: 784-0274
Distrelec Article No.:: 303-41-270
Mfr. Part No.:: IRF2805PBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF

This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.

Features & Benefits

• Supports a maximum continuous drain current of 75A
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience

Applications

• Used in industrial motor drives for effective power control
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles

What is the maximum temperature this component can withstand?

It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.

How does this MOSFET handle high current applications?

It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.

Can it be used in applications with fast switching requirements?

Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.

Is this device suitable for use in power inverters?

Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	75 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	330 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Width	4.83mm
	Typical Gate Charge @ Vgs	150 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Forward Diode Voltage	1.3V
	Height	16.51mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 75 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 330 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Width 4.83mm
	Typical Gate Charge @ Vgs 150 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Forward Diode Voltage 1.3V
	Height 16.51mm
	Minimum Operating Temperature -55 °C

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