Infineon HEXFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB IRF2805PBF
- RS Stock No.:
- 784-0274
- Distrelec Article No.:
- 303-41-270
- Mfr. Part No.:
- IRF2805PBF
- Brand:
- Infineon
Subtotal (1 unit)*
£1.26
(exc. VAT)
£1.51
(inc. VAT)
FREE delivery for orders over £50.00
- 7 unit(s) ready to ship
- Plus 99 unit(s) ready to ship from another location
- Plus 742 unit(s) shipping from 09 October 2025
Units | Per unit |
---|---|
1 - 9 | £1.26 |
10 - 24 | £1.20 |
25 - 49 | £1.14 |
50 - 99 | £1.07 |
100 + | £1.01 |
*price indicative
- RS Stock No.:
- 784-0274
- Distrelec Article No.:
- 303-41-270
- Mfr. Part No.:
- IRF2805PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 75 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.83mm | |
Length | 10.67mm | |
Height | 16.51mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.83mm | ||
Length 10.67mm | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF
Features & Benefits
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience
Applications
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles
What is the maximum temperature this component can withstand?
How does this MOSFET handle high current applications?
Can it be used in applications with fast switching requirements?
Is this device suitable for use in power inverters?
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