onsemi UltraFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-247 HUF75344G3
- RS Stock No.:
- 166-2170
- Mfr. Part No.:
- HUF75344G3
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
£62.43
(exc. VAT)
£74.91
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 07 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | £2.081 | £62.43 |
| 120 - 240 | £1.654 | £49.62 |
| 270 - 480 | £1.615 | £48.45 |
| 510 + | £1.477 | £44.31 |
*price indicative
- RS Stock No.:
- 166-2170
- Mfr. Part No.:
- HUF75344G3
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-247 | |
| Series | UltraFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 285 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 175 nC @ 20 V | |
| Width | 4.82mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.82mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-247 | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 285 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 175 nC @ 20 V | ||
Width 4.82mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 20.82mm | ||
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