onsemi UltraFET N-Channel MOSFET, 75 A, 80 V, 3-Pin TO-220AB HUF75645P3
- RS Stock No.:
- 807-8708
- Mfr. Part No.:
- HUF75645P3
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.14
(exc. VAT)
£4.96
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 440 unit(s) shipping from 27 October 2025
- Plus 999,999,558 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £2.07 | £4.14 |
| 10 - 18 | £1.44 | £2.88 |
| 20 - 98 | £1.35 | £2.70 |
| 100 - 198 | £1.265 | £2.53 |
| 200 + | £1.16 | £2.32 |
*price indicative
- RS Stock No.:
- 807-8708
- Mfr. Part No.:
- HUF75645P3
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | UltraFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 270 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 195 nC @ 20 V | |
| Length | 10.67mm | |
| Height | 16.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 80 V | ||
Series UltraFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 270 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.7mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 195 nC @ 20 V | ||
Length 10.67mm | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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