onsemi UltraFET N-Channel MOSFET, 75 A, 80 V, 3-Pin TO-220AB HUF75645P3

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 50 units)*

£71.60

(exc. VAT)

£85.90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£1.432£71.60
100 +£1.346£67.30

*price indicative

RS Stock No.:
145-5463
Mfr. Part No.:
HUF75645P3
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

80 V

Series

UltraFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

195 nC @ 20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

16.3mm

Minimum Operating Temperature

-55 °C

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links