onsemi UltraFET N-Channel MOSFET, 75 A, 80 V, 3-Pin TO-220AB HUF75645P3

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Subtotal (1 tube of 50 units)*

£71.60

(exc. VAT)

£85.90

(inc. VAT)

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  • 400 unit(s) ready to ship
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Per Tube*
50 - 50£1.432£71.60
100 +£1.346£67.30

*price indicative

RS Stock No.:
145-5463
Mfr. Part No.:
HUF75645P3
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220AB

Series

UltraFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

195 nC @ 20 V

Length

10.67mm

Width

4.7mm

Number of Elements per Chip

1

Height

16.3mm

Minimum Operating Temperature

-55 °C

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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