onsemi UltraFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB HUF75339P3
- RS Stock No.:
- 671-5363
- Mfr. Part No.:
- HUF75339P3
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£6.44
(exc. VAT)
£7.73
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10 unit(s) ready to ship
- Plus 145 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.288 | £6.44 |
*price indicative
- RS Stock No.:
- 671-5363
- Mfr. Part No.:
- HUF75339P3
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | UltraFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 110 nC @ 20 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 110 nC @ 20 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
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