Infineon HEXFET Dual Silicon N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 Full-Pak IRFI3205PBF

This MOSFET is suited for high-efficiency applications, offering a solution for various electronic and electrical systems. With advanced processing, it is effective in power management and switching tasks, serving as a key component in contemporary designs. Its enhancement mode technology ensures consistent performance across diverse operational conditions.

• Continuous drain current capability of 64A supports high-performance applications
• 55V drain-source voltage improves circuit reliability
• Low on-resistance of 8mΩ decreases power loss
• Quick switching speeds enhance efficiency in high-frequency applications
• Maximum power dissipation rated at 63W supports effective thermal management
• TO-220 package design allows straightforward installation in various setups

• Utilised in power supplies for efficient energy conversion
• Suitable for DC-DC converters managing high currents
• Ideal for motor control requiring rapid switching
• Employed in inverter circuits within renewable energy systems
• Used in electric vehicle power management systems

The low on-resistance reduces heat loss, increasing efficiency and ensuring more energy is available for the load instead of being wasted as heat.

An optimal gate voltage of 10V ensures maximum conduction, confirming reliable operation in high current applications.

Yes, it is rated for pulsed drain currents up to 390A, making it suitable for transient demand applications.

It functions effectively across a wide temperature range of -55°C to +175°C, accommodating various environmental conditions.

Yes, its TO-220 package design ensures compatibility with conventional through-hole PCB mounting practices.