Infineon HEXFET N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220 IRFI3205PBF
- RS Stock No.:
- 542-9608
- Mfr. Part No.:
- IRFI3205PBF
- Brand:
- Infineon
Subtotal (1 unit)*
£2.30
(exc. VAT)
£2.76
(inc. VAT)
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- Final 15 unit(s) shipping from 30 October 2025
Units | Per unit |
---|---|
1 - 9 | £2.30 |
10 - 24 | £2.07 |
25 - 49 | £1.93 |
50 - 99 | £1.79 |
100 + | £1.68 |
*price indicative
- RS Stock No.:
- 542-9608
- Mfr. Part No.:
- IRFI3205PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 64 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220 | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 63 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.75mm | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 9.8mm | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 63 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.75mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.8mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 63W Maximum Power Dissipation - IRFI3205PBF
Features & Benefits
• 55V drain-source voltage improves circuit reliability
• Low on-resistance of 8mΩ decreases power loss
• Quick switching speeds enhance efficiency in high-frequency applications
• Maximum power dissipation rated at 63W supports effective thermal management
• TO-220 package design allows straightforward installation in various setups
Applications
• Suitable for DC-DC converters managing high currents
• Ideal for motor control requiring rapid switching
• Employed in inverter circuits within renewable energy systems
• Used in electric vehicle power management systems
How does the low on-resistance benefit performance?
What is the optimal gate voltage for efficient operation?
Can this component handle pulsed currents?
What temperature range can it operate within?
Is this product compatible with standard PCB mounting?
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