Infineon HEXFET N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-220AB IRFZ44ZPBF
- RS Stock No.:
- 688-7165
- Mfr. Part No.:
- IRFZ44ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.80
(exc. VAT)
£4.55
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 70 unit(s) shipping from 08 September 2025
- Plus 15 unit(s) shipping from 08 September 2025
- Plus 2,290 unit(s) shipping from 15 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.76 | £3.80 |
| 50 - 120 | £0.676 | £3.38 |
| 125 - 245 | £0.63 | £3.15 |
| 250 - 495 | £0.594 | £2.97 |
| 500 + | £0.546 | £2.73 |
*price indicative
- RS Stock No.:
- 688-7165
- Mfr. Part No.:
- IRFZ44ZPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 51 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 51 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 29 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
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