Infineon HEXFET N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB IRF1405PBF

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£45.50

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£54.50

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50 - 50£0.91£45.50
100 - 200£0.865£43.25
250 - 450£0.828£41.40
500 - 950£0.774£38.70
1000 +£0.728£36.40

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RS Stock No.:
913-3831
Mfr. Part No.:
IRF1405PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

169 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

170 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

8.77mm

COO (Country of Origin):
PH

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF


This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.

Features & Benefits


• Maximum continuous drain current of 169A enhances durability
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation

Applications


• Used in industrial motor drives for efficient control
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems

What is the maximum gate-to-source voltage limit?


The maximum gate-to-source voltage is ±20V, ensuring safe operation.

How does this device handle thermal management?


It operates effectively up to 175°C, providing reliability in high-temperature conditions.

What factors should be considered during installation?


Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.

Can it be used in switching applications?


Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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