Infineon HEXFET N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB IRF1405PBF
- RS Stock No.:
- 913-3831
- Mfr. Part No.:
- IRF1405PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£45.50
(exc. VAT)
£54.50
(inc. VAT)
FREE delivery for orders over £50.00
- 200 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.91 | £45.50 |
100 - 200 | £0.865 | £43.25 |
250 - 450 | £0.828 | £41.40 |
500 - 950 | £0.774 | £38.70 |
1000 + | £0.728 | £36.40 |
*price indicative
- RS Stock No.:
- 913-3831
- Mfr. Part No.:
- IRF1405PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 169 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 169 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF
Features & Benefits
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation
Applications
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems
What is the maximum gate-to-source voltage limit?
How does this device handle thermal management?
What factors should be considered during installation?
Can it be used in switching applications?
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