Infineon HEXFET N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB IRF1405PBF
- RS Stock No.:
- 543-1099
- Mfr. Part No.:
- IRF1405PBF
- Brand:
- Infineon
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£1.83
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Units | Per unit |
---|---|
1 - 9 | £1.83 |
10 - 24 | £1.74 |
25 - 49 | £1.67 |
50 - 99 | £1.56 |
100 + | £1.47 |
*price indicative
- RS Stock No.:
- 543-1099
- Mfr. Part No.:
- IRF1405PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 169 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
Width | 4.83mm | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 169 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Width 4.83mm | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF
Features & Benefits
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation
Applications
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems
What is the maximum gate-to-source voltage limit?
How does this device handle thermal management?
What factors should be considered during installation?
Can it be used in switching applications?
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