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Infineon HEXFET N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220AB IRFZ44NPBF

RS Stock No.:: 919-4769
Mfr. Part No.:: IRFZ44NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220AB IRFZ44NPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£37.10

(exc. VAT)

£44.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

200 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.742	£37.10
100 - 200	£0.609	£30.45
250 - 450	£0.564	£28.20
500 - 1200	£0.527	£26.35
1250 +	£0.49	£24.50

*price indicative

RS Stock No.:: 919-4769
Mfr. Part No.:: IRFZ44NPBF
Brand:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	49 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	17.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 49 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 17.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Height 8.77mm
	Minimum Operating Temperature -55 °C

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