Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4769
Mfr. Part No.:: IRFZ44NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£38.85

(exc. VAT)

£46.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

600 unit(s) ready to ship
Plus 2,000 unit(s) shipping from 24 June 2026

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Units	Per unit	Per Tube*
50 - 50	£0.777	£38.85
100 - 200	£0.637	£31.85
250 - 450	£0.591	£29.55
500 - 1200	£0.552	£27.60
1250 +	£0.513	£25.65

*price indicative

RS Stock No.:: 919-4769
Mfr. Part No.:: IRFZ44NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	17.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	94W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Width	4.4 mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 17.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 94W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Width 4.4 mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control

• Low resistance of 17.5mΩ for effective power management

• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters

• Motor drives and control systems

• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.