Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44ZPBF
- RS Stock No.:
- 145-9601
- Mfr. Part No.:
- IRFZ44ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£33.00
(exc. VAT)
£39.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
- Plus 2,150 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.66 | £33.00 |
| 100 - 200 | £0.521 | £26.05 |
| 250 - 450 | £0.501 | £25.05 |
| 500 - 1200 | £0.475 | £23.75 |
| 1250 + | £0.455 | £22.75 |
*price indicative
- RS Stock No.:
- 145-9601
- Mfr. Part No.:
- IRFZ44ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 80W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Width | 4.4 mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 80W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 175°C | ||
Length 10mm | ||
Standards/Approvals No | ||
Width 4.4 mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 55V, Infineon
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