Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin DPAK IRFR120NTRLPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.39mm