Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

135 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

39 nC @ 4.5 V

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

2.39mm