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Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

RS Stock No.:: 495-760
Mfr. Part No.:: IRLU8743PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£4.68

(exc. VAT)

£5.615

(inc. VAT)

FREE delivery for orders over £50.00

Limited stock

Plus 225 left, shipping from 08 September 2025
Plus 145 left, shipping from 08 September 2025
Plus 10 left, shipping from 09 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£0.936	£4.68
50 - 120	£0.844	£4.22
125 - 245	£0.786	£3.93
250 - 495	£0.73	£3.65
500 +	£0.674	£3.37

*price indicative

RS Stock No.:: 495-760
Mfr. Part No.:: IRLU8743PBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	160 A
	Maximum Drain Source Voltage	30 V
	Package Type	IPAK (TO-251)
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	135 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	39 nC @ 4.5 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Width	2.39mm
	Minimum Operating Temperature	-55 °C
	Height	6.22mm
	Forward Diode Voltage	1V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 160 A
	Maximum Drain Source Voltage 30 V
	Package Type IPAK (TO-251)
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 135 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 39 nC @ 4.5 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Width 2.39mm
	Minimum Operating Temperature -55 °C
	Height 6.22mm
	Forward Diode Voltage 1V

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF

This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.

Features & Benefits

• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability

Applications

• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply

How does it perform in high-temperature environments?

The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.

What is the significance of low RDS(on) for my design?

A low RDS(on) value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.

Can it be used in pulse applications?

Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.

What factors should I consider during installation?

It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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