MPN

Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK IRFU120NPBF

RS Stock No.:: 541-1613
Distrelec Article No.:: 303-41-373
Mfr. Part No.:: IRFU120NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK IRFU120NPBF

Bulk discount available

Subtotal (1 unit)*

£0.86

(exc. VAT)

£1.03

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 1 unit(s) shipping from 08 September 2025
Plus 4,306 unit(s) shipping from 15 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 24	£0.86
25 - 49	£0.83
50 - 99	£0.79
100 - 249	£0.74
250 +	£0.69

*price indicative

RS Stock No.:: 541-1613
Distrelec Article No.:: 303-41-373
Mfr. Part No.:: IRFU120NPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.4 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	210 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	48 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	6.6mm
	Number of Elements per Chip	1
	Width	2.3mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Height	6.1mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.4 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 210 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 48 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 6.6mm
	Number of Elements per Chip 1
	Width 2.3mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Height 6.1mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF

This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling.

Features & Benefits

• Designed for enhancement mode operation, offering reliable switching
• High power dissipation capability of 48W enhances performance
• Ideal for high current applications in robust electronic designs
• Single Si MOSFET configuration ensures simplified integration

Applications

• Used in power management solutions for automation systems
• Used in motor control circuits for industrial machinery
• Utilised in power converters for renewable energy systems
• Suitable for consumer electronics requiring reliable power delivery
• Integral to motor drives in electrical and mechanical

What is the significance of the low Rds(on) value?

The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial.

How does the MOSFET perform under extreme temperatures?

With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common.

What benefits does the enhancement mode provide for circuit designers?

Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management.

Can this MOSFET be used in high power applications?

Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.