Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK IRFU120NPBF

Bulk discount available

Subtotal (1 unit)*

£0.86

(exc. VAT)

£1.03

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 unit(s) ready to ship
  • Plus 4,231 unit(s) shipping from 28 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 24£0.86
25 - 49£0.83
50 - 99£0.79
100 - 249£0.74
250 +£0.69

*price indicative

RS Stock No.:
541-1613
Distrelec Article No.:
303-41-373
Mfr. Part No.:
IRFU120NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Transistor Material

Si

Width

2.3mm

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.3V

Height

6.1mm

Minimum Operating Temperature

-55 °C

Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF


This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling.

Features & Benefits


• Designed for enhancement mode operation, offering reliable switching
• High power dissipation capability of 48W enhances performance
• Ideal for high current applications in robust electronic designs
• Single Si MOSFET configuration ensures simplified integration

Applications


• Used in power management solutions for automation systems
• Used in motor control circuits for industrial machinery
• Utilised in power converters for renewable energy systems
• Suitable for consumer electronics requiring reliable power delivery
• Integral to motor drives in electrical and mechanical

What is the significance of the low Rds(on) value?


The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial.

How does the MOSFET perform under extreme temperatures?


With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common.

What benefits does the enhancement mode provide for circuit designers?


Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management.

Can this MOSFET be used in high power applications?


Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links