Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK IRFU120NPBF
- RS Stock No.:
- 541-1613
- Distrelec Article No.:
- 303-41-373
- Mfr. Part No.:
- IRFU120NPBF
- Brand:
- Infineon
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Units | Per unit |
---|---|
1 - 24 | £0.86 |
25 - 49 | £0.83 |
50 - 99 | £0.79 |
100 - 249 | £0.74 |
250 + | £0.69 |
*price indicative
- RS Stock No.:
- 541-1613
- Distrelec Article No.:
- 303-41-373
- Mfr. Part No.:
- IRFU120NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 9.4 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | IPAK (TO-251) | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 210 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 48 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
Transistor Material | Si | |
Width | 2.3mm | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Maximum Operating Temperature | +175 °C | |
Forward Diode Voltage | 1.3V | |
Height | 6.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Transistor Material Si | ||
Width 2.3mm | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.3V | ||
Height 6.1mm | ||
Minimum Operating Temperature -55 °C | ||

Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF
Features & Benefits
• High power dissipation capability of 48W enhances performance
• Ideal for high current applications in robust electronic designs
• Single Si MOSFET configuration ensures simplified integration
Applications
• Used in motor control circuits for industrial machinery
• Utilised in power converters for renewable energy systems
• Suitable for consumer electronics requiring reliable power delivery
• Integral to motor drives in electrical and mechanical
What is the significance of the low Rds(on) value?
How does the MOSFET perform under extreme temperatures?
What benefits does the enhancement mode provide for circuit designers?
Can this MOSFET be used in high power applications?
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