International Rectifier HEXFET N-Channel MOSFET, 9.4 A, 40 V Enhancement, 8-Pin SOIC IRF7468PBF
- RS Stock No.:
- 230-311
- Mfr. Part No.:
- IRF7468PBF
- Brand:
- International Rectifier
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- RS Stock No.:
- 230-311
- Mfr. Part No.:
- IRF7468PBF
- Brand:
- International Rectifier
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | International Rectifier | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand International Rectifier | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Length 5mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TH
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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